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In this paper, we develop a 6-input fracturable non-volatile Clockless LUT (C-LUT) using spin Hall effect (SHE)-based Magnetic Tunnel Junctions (MTJs) and provide a detailed comparison between the SHE-MTJ-based C-LUT and Spin Transfer Torque (STT)-MTJ-based C-LUT. The proposed C-LUT offers an attractive alternative for implementing combinational logic as well as sequential logic versus previous spin-based LUT designs in the literature. Foremost, C-LUT eliminates the sense amplifier typically employed by using a differential polarity dual MTJ design, as opposed to a static reference resistance MTJ. This realizes a much wider read margin and the Monte Carlo simulation of the proposed fracturable C-LUT indicates no read and write errors in the presence of a variety of process variations scenarios involving MOS transistors as well as MTJs. Additionally, simulation results indicate that the proposed C-LUT reduces the standby power dissipation by $5.4$-fold compared to the SRAM-based LUT. Furthermore, the proposed SHE-MTJ-based C-LUT reduces the area by 1.3-fold and 2-fold compared to the SRAM-based LUT and the STT-MTJ-based C-LUT, respectively. 

Recently, the promising aspects of compressive sensing have inspired new circuit-level approaches for their efficient realization within the literature. However, most of these recent advances involving novel sampling techniques have been proposed without considering hardware and signal constraints. Additionally, traditional hardware designs for generating non-uniform sampling clock incur large area overhead and power dissipation. Herein, we propose a novel non-uniform clock generator called Adaptive Quantization Rate (AQR) generator using Magnetic Random Access Memory (MRAM)-based stochastic oscillator devices. Our proposed AQR generator provides orders of magnitude reduction in area while offering 6-fold reduced power dissipation, on average, compared to the state-of-the-art non-uniform clock generators. 

A low-energy hardware implementation of deep belief network (DBN) architecture is developed using near-zero energy barrier probabilistic spin logic devices (p-bits), which are modeled to real- ize an intrinsic sigmoidal activation function. A CMOS/spin based weighted array structure is designed to implement a restricted Boltzmann machine (RBM). Device-level simulations based on precise physics relations are used to validate the sigmoidal relation between the output probability of a p-bit and its input currents. Characteristics of the resistive networks and p-bits are modeled in SPICE to perform a circuit-level simulation investigating the performance, area, and power consumption tradeoffs of the weighted array. In the application-level simulation, a DBN is implemented in MATLAB for digit recognition using the extracted device and circuit behavioral models. The MNIST data set is used to assess the accuracy of the DBN using 5,000 training images for five distinct network topologies. The results indicate that a baseline error rate of 36.8% for a 784x10 DBN trained by 100 samples can be reduced to only 3.7% using a 784x800x800x10 DBN trained by 5,000 input samples. Finally, Power dissipation and accuracy tradeoffs for probabilistic computing mechanisms using resistive devices are identified.